@article{a0e8c9cfb781448fb8aadd8e132ad54a,
title = "Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy",
keywords = "Compensation, GaN/sapphire interface, Impurity band, Scanning probe microscopy, Surface contact potential",
author = "Hsu, {J. W.P.} and Lang, {D. V.} and S. Richter and Kleiman, {R. N.} and Sergent, {A. M.} and Look, {D. C.} and Molnar, {R. J.}",
year = "2001",
month = mar,
doi = "10.1007/s11664-001-0003-5",
language = "English",
volume = "30",
pages = "115--122",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "3",
}