@article{a0e8c9cfb781448fb8aadd8e132ad54a,
title = "Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy",
keywords = "Compensation, GaN/sapphire interface, Impurity band, Scanning probe microscopy, Surface contact potential",
author = "Hsu, \{J. W.P.\} and Lang, \{D. V.\} and S. Richter and Kleiman, \{R. N.\} and Sergent, \{A. M.\} and Look, \{D. C.\} and Molnar, \{R. J.\}",
year = "2001",
month = mar,
doi = "10.1007/s11664-001-0003-5",
language = "English",
volume = "30",
pages = "115--122",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "3",
}