Abstract
Surface-sensitive X-ray grazing incidence diffraction (GID) was used to investigate the elastic strain relaxation in laterally periodic Si/SiGe wires, oriented along the direction, fabricated by holographic lithography and reactive ion etching from a 10-period multilayer. Using transverse and longitudinal scans, i.e. with the diffraction vector parallel and perpendicular to the wire direction information on the shape and the strain status were obtained from measurements at different incidence and exit angles. For the simulation a modified effective refractive index profile, i.e. a different average electron density for the etched and the non-etched wire pattern was taken into account. Using data from finite element calculations of the strain fields, a simulation based on DWBA is in good agreement with the experimental data.
Original language | American English |
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Pages (from-to) | 130-134 |
Journal | Physica B: Condensed Matter |
Volume | 283 |
Issue number | 1-3 |
DOIs | |
State | Published - Jun 2000 |
Externally published | Yes |
Keywords
- Si/SiGe nanostructures
- X-ray diffraction
- Grazing incidence diffraction
- Strain analysis
- Finite element calculations
Disciplines
- Electrical and Computer Engineering