Abstract
A new approach for in-plane X-ray scattering from the cleavages of epitaxial films or superlattices, where the scattering vectors are parallel to the interfaces, is proposed. This method can be employed to determine directly the in-plane X-ray strains and other atomic registry along the interfaces of the epitaxial structures.
Original language | American English |
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Pages (from-to) | 354-358 |
Journal | Journal of Crystal Growth |
Volume | 152 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2 1995 |
Externally published | Yes |
Keywords
- X-ray diffraction
Disciplines
- Electrical and Computer Engineering