Incorporation of silicon and aluminum in low temperature molecular beam epitaxial GaAs

M. O. Manasreh; K. R. Evans; C. E. Stutz; D. C. Look; J. Hemsky

doi:10.1063/1.107031

Incorporation of silicon and aluminum in low temperature molecular beam epitaxial GaAs

M. O. Manasreh
, K. R. Evans
, C. E. Stutz
, D. C. Look
, J. Hemsky

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2377-2379
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	19
DOIs	https://doi.org/10.1063/1.107031
State	Published - 1992

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Incorporation of silicon and aluminum in low temperature molecular beam epitaxial GaAs",

author = "Manasreh, \{M. O.\} and Evans, \{K. R.\} and Stutz, \{C. E.\} and Look, \{D. C.\} and J. Hemsky",

note = "{\textcopyright} 1992 American Institute of Physics.",

year = "1992",

doi = "10.1063/1.107031",

language = "English",

volume = "60",

pages = "2377--2379",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Incorporation of silicon and aluminum in low temperature molecular beam epitaxial GaAs

AU - Manasreh, M. O.

AU - Evans, K. R.

AU - Stutz, C. E.

AU - Look, D. C.

AU - Hemsky, J.

PY - 1992

Y1 - 1992

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DO - 10.1063/1.107031

M3 - Article

AN - SCOPUS:0042899690

SN - 0003-6951

VL - 60

SP - 2377

EP - 2379

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Incorporation of silicon and aluminum in low temperature molecular beam epitaxial GaAs

ASJC Scopus Subject Areas

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