| Original language | English |
|---|---|
| Pages (from-to) | 10272-10275 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 41 |
| Issue number | 14 |
| DOIs | |
| State | Published - 1990 |
ASJC Scopus Subject Areas
- Condensed Matter Physics
Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200°C: Observation of an EL2-like defect
M. O. Manasreh, D. C. Look, K. R. Evans, C. E. Stutz
Research output: Contribution to journal › Article › peer-review