InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor

C. L. Chen, L. J. Mahoney, E. R. Brown

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	476-478
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	10
DOIs	https://doi.org/10.1109/55.537080
State	Published - Oct 1996
Externally published	Yes

ASJC Scopus Subject Areas

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