Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

F. Tuomisto; V. Ranki; D. C. Look; G. C. Farlow

doi:10.1103/PhysRevB.76.165207

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

F. Tuomisto, V. Ranki, D. C. Look, G. C. Farlow

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	165207
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	76
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.76.165207
State	Published - Oct 24 2007

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.76.165207

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title = "Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN",

author = "F. Tuomisto and V. Ranki and Look, \{D. C.\} and Farlow, \{G. C.\}",

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AU - Tuomisto, F.

AU - Ranki, V.

AU - Look, D. C.

AU - Farlow, G. C.

PY - 2007/10/24

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IS - 16

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ER -

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

ASJC Scopus Subject Areas

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