Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity

Weifu Fang; Ellis Cumberbatch

doi:10.1137/0152039

Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity

Weifu Fang, Ellis Cumberbatch

Wright State University

Research output: Contribution to journal › Article › peer-review

Abstract

Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.

Original language	American English
Journal	SIAM Journal on Applied Mathematics
Volume	52
DOIs	https://doi.org/10.1137/0152039
State	Published - Jun 1 1992

Keywords

MOSFET
contact resistivity
elliptic equation
identification problem
inverse problem

Access to Document

10.1137/0152039License: Unspecified

Inverse Problems for Metal Oxide Semiconductor Field-Effect TransFinal published version, 1.04 MBLicense: Unspecified

Cite this

@article{3d06e3a1d7b24d9cbd6ddb0868577215,

title = "Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity",

abstract = " Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.",

keywords = "MOSFET, contact resistivity, elliptic equation, identification problem, inverse problem",

author = "Weifu Fang and Ellis Cumberbatch",

year = "1992",

month = jun,

day = "1",

doi = "10.1137/0152039",

language = "American English",

volume = "52",

journal = "SIAM Journal on Applied Mathematics",

}

TY - JOUR

T1 - Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity

AU - Fang, Weifu

AU - Cumberbatch, Ellis

PY - 1992/6/1

Y1 - 1992/6/1

N2 - Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.

AB - Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.

KW - MOSFET

KW - contact resistivity

KW - elliptic equation

KW - identification problem

KW - inverse problem

UR - https://corescholar.libraries.wright.edu/math/461

U2 - 10.1137/0152039

DO - 10.1137/0152039

M3 - Article

VL - 52

JO - SIAM Journal on Applied Mathematics

JF - SIAM Journal on Applied Mathematics

ER -

Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity

Abstract

Keywords

Access to Document

Other files and links

Cite this