Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor

Adrienne D. Williams; Fahima Ouchen; Steve Kim; Yen H. Ngo; Said Elhamri; Shin Mou; Gregory Kozlowski; Rajesh R. Naik; James G. Grote

doi:10.1117/12.2063170

Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor

Adrienne D. Williams, Fahima Ouchen, Steve Kim, Yen H. Ngo, Said Elhamri, Shin Mou, Gregory Kozlowski, Rajesh R. Naik, James G. Grote

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Nanobiosystems
Subtitle of host publication	Processing, Characterization, and Applications VII
Editors	Norihisa Kobayashi, Fahima Ouchen, Ileana Rau
Publisher	SPIE
ISBN (Electronic)	9781628411980
DOIs	https://doi.org/10.1117/12.2063170
State	Published - 2014
Externally published	Yes
Event	Nanobiosystems: Processing, Characterization, and Applications VII - San Diego, United States Duration: Aug 18 2014 → Aug 20 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9171
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Nanobiosystems: Processing, Characterization, and Applications VII
Country/Territory	United States
City	San Diego
Period	8/18/14 → 8/20/14

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2063170

Cite this

Williams, A. D., Ouchen, F., Kim, S., Ngo, Y. H., Elhamri, S., Mou, S., Kozlowski, G., Naik, R. R., & Grote, J. G. (2014). Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor. In N. Kobayashi, F. Ouchen, & I. Rau (Eds.), Nanobiosystems: Processing, Characterization, and Applications VII Article 91710C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9171). SPIE. https://doi.org/10.1117/12.2063170

Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor. / Williams, Adrienne D.; Ouchen, Fahima; Kim, Steve et al.
Nanobiosystems: Processing, Characterization, and Applications VII. ed. / Norihisa Kobayashi; Fahima Ouchen; Ileana Rau. SPIE, 2014. 91710C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9171).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Williams, AD, Ouchen, F, Kim, S, Ngo, YH, Elhamri, S, Mou, S, Kozlowski, G, Naik, RR & Grote, JG 2014, Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor. in N Kobayashi, F Ouchen & I Rau (eds), Nanobiosystems: Processing, Characterization, and Applications VII., 91710C, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9171, SPIE, Nanobiosystems: Processing, Characterization, and Applications VII, San Diego, United States, 8/18/14. https://doi.org/10.1117/12.2063170

Williams AD, Ouchen F, Kim S, Ngo YH, Elhamri S, Mou S et al. Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor. In Kobayashi N, Ouchen F, Rau I, editors, Nanobiosystems: Processing, Characterization, and Applications VII. SPIE. 2014. 91710C. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2063170

Williams, Adrienne D. ; Ouchen, Fahima ; Kim, Steve et al. / Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor. Nanobiosystems: Processing, Characterization, and Applications VII. editor / Norihisa Kobayashi ; Fahima Ouchen ; Ileana Rau. SPIE, 2014. (Proceedings of SPIE - The International Society for Optical Engineering).

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Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

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