Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

W. D. Zhang, T. A. Growden, D. F. Storm, D. J. Meyer, P. R. Berger, E. R. Brown

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number8933349
Pages (from-to)75-79
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume67
Issue number1
DOIs
StatePublished - Jan 2020
Externally publishedYes

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • GaN/AlN
  • heterostructure
  • measurement
  • modeling
  • P-SPICE
  • resonant tunneling diode (RTD)
  • switching time

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