Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

  • W. D. Zhang
  • , T. A. Growden
  • , D. F. Storm
  • , D. J. Meyer
  • , P. R. Berger
  • , E. R. Brown

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number8933349
Pages (from-to)75-79
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume67
Issue number1
DOIs
StatePublished - Jan 2020
Externally publishedYes

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • GaN/AlN
  • P-SPICE
  • heterostructure
  • measurement
  • modeling
  • resonant tunneling diode (RTD)
  • switching time

Cite this