@article{1879b489547a4cfbb2c1dab0644ddeb5,
title = "Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire",
keywords = "Dislocations, HEMT, Interface roughness, MOVPE, Scattering, X-Ray reflectivity",
author = "T. Aggerstam and S. Lourdudoss and Radamson, \{H. H.\} and M. Sj{\"o}din and P. Lorenzini and Look, \{D. C.\}",
year = "2006",
month = oct,
day = "25",
doi = "10.1016/j.tsf.2006.04.052",
language = "English",
volume = "515",
pages = "705--707",
journal = "Thin Solid Films",
issn = "0040-6090",
number = "2 SPEC. ISS.",
}