Investigation of Ultrashort Photocarrier Relaxation Times in Low-Temperature-Grown GaAs

K. A. Mclntosh; K. B. Nichols; S. Verghese; E. R. Brown

doi:10.1063/1.118412

Investigation of Ultrashort Photocarrier Relaxation Times in Low-Temperature-Grown GaAs

K. A. Mclntosh, K. B. Nichols, S. Verghese, E. R. Brown

Research output: Contribution to journal › Article › peer-review

Abstract

Photocarrier relaxation times τr in low-temperature-grown (LTG) GaAs have been determined with time-resolved reflectance measurements. Measured τr values are extremely sensitive to the substrate temperature during LTG GaAs growth and postgrowth anneal. Photogenerated-electron relaxation times as short as 90 fs are found for LTG GaAs grown at temperatures near 200 °C and annealed at temperatures below 580 °C. We report the results of a systematic investigation of the dependence of τr on growth temperatures between 180 and 260 °C and anneal temperatures between 480 and 620 °C.

Original language	English
Pages (from-to)	354-356
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	3
DOIs	https://doi.org/10.1063/1.118412
State	Published - Jan 20 1997
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.118412

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title = "Investigation of Ultrashort Photocarrier Relaxation Times in Low-Temperature-Grown GaAs",

abstract = "Photocarrier relaxation times τr in low-temperature-grown (LTG) GaAs have been determined with time-resolved reflectance measurements. Measured τr values are extremely sensitive to the substrate temperature during LTG GaAs growth and postgrowth anneal. Photogenerated-electron relaxation times as short as 90 fs are found for LTG GaAs grown at temperatures near 200 °C and annealed at temperatures below 580 °C. We report the results of a systematic investigation of the dependence of τr on growth temperatures between 180 and 260 °C and anneal temperatures between 480 and 620 °C.",

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language = "English",

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journal = "Applied Physics Letters",

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AU - Mclntosh, K. A.

AU - Nichols, K. B.

AU - Verghese, S.

AU - Brown, E. R.

PY - 1997/1/20

Y1 - 1997/1/20

N2 - Photocarrier relaxation times τr in low-temperature-grown (LTG) GaAs have been determined with time-resolved reflectance measurements. Measured τr values are extremely sensitive to the substrate temperature during LTG GaAs growth and postgrowth anneal. Photogenerated-electron relaxation times as short as 90 fs are found for LTG GaAs grown at temperatures near 200 °C and annealed at temperatures below 580 °C. We report the results of a systematic investigation of the dependence of τr on growth temperatures between 180 and 260 °C and anneal temperatures between 480 and 620 °C.

AB - Photocarrier relaxation times τr in low-temperature-grown (LTG) GaAs have been determined with time-resolved reflectance measurements. Measured τr values are extremely sensitive to the substrate temperature during LTG GaAs growth and postgrowth anneal. Photogenerated-electron relaxation times as short as 90 fs are found for LTG GaAs grown at temperatures near 200 °C and annealed at temperatures below 580 °C. We report the results of a systematic investigation of the dependence of τr on growth temperatures between 180 and 260 °C and anneal temperatures between 480 and 620 °C.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Investigation of Ultrashort Photocarrier Relaxation Times in Low-Temperature-Grown GaAs

Abstract

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