Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation

A. Krtschil; D. C. Look; Z. Q. Fang; A. Dadgar; A. Diez; A. Krost

doi:10.1016/j.physb.2005.12.176

Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation

A. Krtschil, D. C. Look, Z. Q. Fang, A. Dadgar, A. Diez, A. Krost

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	703-706
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.176
State	Published - Apr 1 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Conductivity domains
Defects
Mixed conductivity
p-Type ZnO

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10.1016/j.physb.2005.12.176

Cite this

@article{2f6e64dee0cf4150a0e4090da2d6092c,

title = "Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation",

keywords = "Conductivity domains, Defects, Mixed conductivity, p-Type ZnO",

author = "A. Krtschil and Look, {D. C.} and Fang, {Z. Q.} and A. Dadgar and A. Diez and A. Krost",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.176",

language = "English",

volume = "376-377",

pages = "703--706",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

number = "1",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

}

TY - JOUR

T1 - Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation

AU - Krtschil, A.

AU - Look, D. C.

AU - Fang, Z. Q.

AU - Dadgar, A.

AU - Diez, A.

AU - Krost, A.

PY - 2006/4/1

Y1 - 2006/4/1

KW - Conductivity domains

KW - Defects

KW - Mixed conductivity

KW - p-Type ZnO

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UR - http://www.scopus.com/inward/citedby.url?scp=33645166197&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.176

DO - 10.1016/j.physb.2005.12.176

M3 - Conference article

AN - SCOPUS:33645166197

SN - 0921-4526

VL - 376-377

SP - 703

EP - 706

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation

ASJC Scopus Subject Areas

Keywords

Access to Document

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