Low frequency noise in n-GaN with high electron mobility

Sergey L. Rumyantsev; D. C. Look; M. E. Levinshtein; M. Asif Khan; G. Simin; V. Adivarahan; R. J. Molnar; M. S. Shur

Low frequency noise in n-GaN with high electron mobility

Sergey L. Rumyantsev, D. C. Look, M. E. Levinshtein, M. Asif Khan, G. Simin, V. Adivarahan, R. J. Molnar, M. S. Shur

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	II/-
Journal	Materials Science Forum
Volume	338
State	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{55021da790e74e70a85ff62b7683c107,

title = "Low frequency noise in n-GaN with high electron mobility",

author = "Rumyantsev, {Sergey L.} and Look, {D. C.} and Levinshtein, {M. E.} and {Asif Khan}, M. and G. Simin and V. Adivarahan and Molnar, {R. J.} and Shur, {M. S.}",

year = "2000",

language = "English",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "0255-5476",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - JOUR

T1 - Low frequency noise in n-GaN with high electron mobility

AU - Rumyantsev, Sergey L.

AU - Look, D. C.

AU - Levinshtein, M. E.

AU - Asif Khan, M.

AU - Simin, G.

AU - Adivarahan, V.

AU - Molnar, R. J.

AU - Shur, M. S.

PY - 2000

Y1 - 2000

UR - http://www.scopus.com/inward/record.url?scp=0343878043&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343878043&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0343878043

SN - 0255-5476

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Low frequency noise in n-GaN with high electron mobility

ASJC Scopus Subject Areas

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Cite this