Abstract
Forty-one papers were presented in five sessions, as follows: Growth Issues, including growth of As and P-based compounds, annealing effects, and characterization by scanning tunneling microscopy (STM) real-time ellipsometry, and positron annihilation; Processing and Characterization, including point-defect and precipitate formations and their characterization by electrical, optical magnetic resonance, and STM techniques; Optical and Optoelectronic Properties, including the materials GaAs, InGaAs, and InGaP, and their responses to light stimulation, explained by various models; InP and Related Ternary Materials, including the Materials InP, InGaAs, InAlAs, and ordered InGaAs/InAlAs layers, characterized by optically detected magnetic resonance, electrical measurements, tunneling electron microscopy, and photoreflectance; Applications of Nonstoichiometric Materials, including power MESFET design, phase noise measurements, coherent microwave generation, excitonic electro-optic observations, and GaAs on Si device applications.
| Original language | English |
|---|---|
| Journal | Spring meeting held in Pittsburgh, PA, 12-16 Apr. 1993 |
| State | Published - Aug 1 1994 |
| Externally published | Yes |
Keywords
- Annealing
- Conferences
- Epitaxy
- Gallium Arsenides
- Low Temperature
- Optical Properties
- Periodicals
- Stoichiometry
- Electro-Optics
- Ellipsometry
- Field Effect Transistors
- Indium Phosphides
- Noise Measurement
- Point Defects
- Positron Annihilation
- Precipitates
- Scanning Tunneling Microscopy
- Ternary Alloys