Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition

J. C. Roberts; K. S. Boutros; S. M. Bedair; D. C. Look

doi:10.1063/1.111626

Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition

J. C. Roberts, K. S. Boutros, S. M. Bedair, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2397-2399
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	18
DOIs	https://doi.org/10.1063/1.111626
State	Published - 1994

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.111626

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@article{cd9b9d1eba7a4c17ac9f57e4447042bf,

title = "Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition",

author = "Roberts, {J. C.} and Boutros, {K. S.} and Bedair, {S. M.} and Look, {D. C.}",

year = "1994",

doi = "10.1063/1.111626",

language = "English",

volume = "64",

pages = "2397--2399",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "18",

}

TY - JOUR

T1 - Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition

AU - Roberts, J. C.

AU - Boutros, K. S.

AU - Bedair, S. M.

AU - Look, D. C.

PY - 1994

Y1 - 1994

UR - http://www.scopus.com/inward/record.url?scp=0342540902&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342540902&partnerID=8YFLogxK

U2 - 10.1063/1.111626

DO - 10.1063/1.111626

M3 - Article

AN - SCOPUS:0342540902

SN - 0003-6951

VL - 64

SP - 2397

EP - 2399

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition

ASJC Scopus Subject Areas

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