Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition

J. C. Roberts; K. S. Boutros; S. M. Bedair; D. C. Look

doi:10.1063/1.111626

Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition

J. C. Roberts
, K. S. Boutros
, S. M. Bedair
, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2397-2399
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	18
DOIs	https://doi.org/10.1063/1.111626
State	Published - 1994

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.111626

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title = "Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition",

author = "Roberts, \{J. C.\} and Boutros, \{K. S.\} and Bedair, \{S. M.\} and Look, \{D. C.\}",

year = "1994",

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journal = "Applied Physics Letters",

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AU - Roberts, J. C.

AU - Boutros, K. S.

AU - Bedair, S. M.

AU - Look, D. C.

PY - 1994

Y1 - 1994

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SP - 2397

EP - 2399

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition

ASJC Scopus Subject Areas

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