Luminescence properties of charged dislocations in semi-insulating GaN:Zn

S. Srinivasan; J. Cai; O. Contreras; F. A. Ponce; D. C. Look; R. J. Molnar

doi:10.1002/pssc.200390100

Luminescence properties of charged dislocations in semi-insulating GaN:Zn

S. Srinivasan
, J. Cai
, O. Contreras
, F. A. Ponce
, D. C. Look
, R. J. Molnar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	508-511
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390100
State	Published - Dec 1 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: Jul 22 2002 → Jul 25 2002

ASJC Scopus Subject Areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200390100

Cite this

@article{475433314efb43d98d9fecd0ba3e2092,

title = "Luminescence properties of charged dislocations in semi-insulating GaN:Zn",

author = "S. Srinivasan and J. Cai and O. Contreras and Ponce, \{F. A.\} and Look, \{D. C.\} and Molnar, \{R. J.\}",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/pssc.200390100",

language = "English",

pages = "508--511",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

number = "1",

note = "2nd International Workshop on Nitride Semiconductors, IWN 2002 ; Conference date: 22-07-2002 Through 25-07-2002",

}

TY - JOUR

T1 - Luminescence properties of charged dislocations in semi-insulating GaN:Zn

AU - Srinivasan, S.

AU - Cai, J.

AU - Contreras, O.

AU - Ponce, F. A.

AU - Look, D. C.

AU - Molnar, R. J.

PY - 2002/12/1

Y1 - 2002/12/1

UR - https://www.scopus.com/pages/publications/28344452006

UR - https://www.scopus.com/pages/publications/28344452006#tab=citedBy

U2 - 10.1002/pssc.200390100

DO - 10.1002/pssc.200390100

M3 - Conference article

AN - SCOPUS:28344452006

SN - 1610-1634

SP - 508

EP - 511

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Luminescence properties of charged dislocations in semi-insulating GaN:Zn

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this