Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures

D. C. Look; B. Jogai; C. E. Stutz; R. E. Sherriff; G. C. DeSalvo; T. J. Rogers; J. M. Ballingall

doi:10.1063/1.357148

Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures

D. C. Look, B. Jogai, C. E. Stutz, R. E. Sherriff, G. C. DeSalvo, T. J. Rogers, J. M. Ballingall

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	328-331
Number of pages	4
Journal	Journal of Applied Physics
Volume	76
Issue number	1
DOIs	https://doi.org/10.1063/1.357148
State	Published - 1994

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.357148

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title = "Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures",

author = "Look, {D. C.} and B. Jogai and Stutz, {C. E.} and Sherriff, {R. E.} and DeSalvo, {G. C.} and Rogers, {T. J.} and Ballingall, {J. M.}",

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pages = "328--331",

journal = "Journal of Applied Physics",

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AU - Look, D. C.

AU - Jogai, B.

AU - Stutz, C. E.

AU - Sherriff, R. E.

AU - DeSalvo, G. C.

AU - Rogers, T. J.

AU - Ballingall, J. M.

PY - 1994

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures

ASJC Scopus Subject Areas

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