Magnetoluminescence studies in GaAs-AlxGa1-xAs single heterojunctions: Observation of parity-forbidden Landau-level transitions

D. C. Reynolds; D. C. Look; B. Jogai; C. E. Stutz; R. Jones; K. K. Bajaj

doi:10.1103/PhysRevB.50.11710

Magnetoluminescence studies in GaAs-AlxGa1-xAs single heterojunctions: Observation of parity-forbidden Landau-level transitions

D. C. Reynolds, D. C. Look, B. Jogai, C. E. Stutz, R. Jones, K. K. Bajaj

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	11710-11713
Number of pages	4
Journal	Physical Review B
Volume	50
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.50.11710
State	Published - 1994

ASJC Scopus Subject Areas

Condensed Matter Physics

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10.1103/PhysRevB.50.11710

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title = "Magnetoluminescence studies in GaAs-AlxGa1-xAs single heterojunctions: Observation of parity-forbidden Landau-level transitions",

author = "Reynolds, {D. C.} and Look, {D. C.} and B. Jogai and Stutz, {C. E.} and R. Jones and Bajaj, {K. K.}",

year = "1994",

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volume = "50",

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journal = "Physical Review B",

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AU - Reynolds, D. C.

AU - Look, D. C.

AU - Jogai, B.

AU - Stutz, C. E.

AU - Jones, R.

AU - Bajaj, K. K.

PY - 1994

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Magnetoluminescence studies in GaAs-AlxGa1-xAs single heterojunctions: Observation of parity-forbidden Landau-level transitions

ASJC Scopus Subject Areas

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