Magnetoresistance method to determine GaAs and AlxGa 1-xAs mobilities in AlxGa1-xAs/GaAs modulation-doped field-effect transistor structures

D. C. Look; George B. Norris; W. Kopp; T. Henderson; H. Morkoç

doi:10.1063/1.96186

Magnetoresistance method to determine GaAs and Al_xGa _1-xAs mobilities in Al_xGa_1-xAs/GaAs modulation-doped field-effect transistor structures

D. C. Look, George B. Norris, W. Kopp, T. Henderson, H. Morkoç

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	267-269
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	3
DOIs	https://doi.org/10.1063/1.96186
State	Published - 1985

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.96186

Cite this

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title = "Magnetoresistance method to determine GaAs and AlxGa 1-xAs mobilities in AlxGa1-xAs/GaAs modulation-doped field-effect transistor structures",

author = "Look, \{D. C.\} and Norris, \{George B.\} and W. Kopp and T. Henderson and H. Morko{\c c}",

year = "1985",

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pages = "267--269",

journal = "Applied Physics Letters",

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T1 - Magnetoresistance method to determine GaAs and AlxGa 1-xAs mobilities in AlxGa1-xAs/GaAs modulation-doped field-effect transistor structures

AU - Look, D. C.

AU - Norris, George B.

AU - Kopp, W.

AU - Henderson, T.

AU - Morkoç, H.

PY - 1985

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VL - 47

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JO - Applied Physics Letters

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IS - 3

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Magnetoresistance method to determine GaAs and AlxGa 1-xAs mobilities in AlxGa1-xAs/GaAs modulation-doped field-effect transistor structures

ASJC Scopus Subject Areas

Access to Document

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Magnetoresistance method to determine GaAs and Al_xGa _1-xAs mobilities in Al_xGa_1-xAs/GaAs modulation-doped field-effect transistor structures