Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200°C

D. C. Look; D. C. Walters; C. E. Stutz; K. R. Evans; J. R. Sizelove

doi:10.1063/1.350450

Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200°C

D. C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	5981-5984
Number of pages	4
Journal	Journal of Applied Physics
Volume	71
Issue number	12
DOIs	https://doi.org/10.1063/1.350450
State	Published - 1992

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.350450

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title = "Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200°C",

author = "Look, {D. C.} and Walters, {D. C.} and Stutz, {C. E.} and Evans, {K. R.} and Sizelove, {J. R.}",

year = "1992",

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language = "English",

volume = "71",

pages = "5981--5984",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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AU - Look, D. C.

AU - Walters, D. C.

AU - Stutz, C. E.

AU - Evans, K. R.

AU - Sizelove, J. R.

PY - 1992

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JO - Journal of Applied Physics

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Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200°C

ASJC Scopus Subject Areas

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