Megawatt Solid-State Electronics

E. R. Brown

doi:10.1016/S0038-1101(98)00245-7

Megawatt Solid-State Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reviews some of the key challenges in developing solid-state electronics operating at power levels from approximately 0.1 to beyond 1 MW. Applications exist in this range of power for military and commercial applications alike. The technology of great interest is wide-band-gap semiconductors, particularly SiC, which is well known for its superior electrical strength and thermal conductivity compared to the traditional power semiconductor, Si. These properties can be utilized to have significant benefits at both the device and systems level.

Original language	English
Pages (from-to)	2119-2130
Number of pages	12
Journal	Solid-State Electronics
Volume	42
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(98)00245-7
State	Published - Dec 1998
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(98)00245-7

Cite this

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Megawatt Solid-State Electronics

Abstract

ASJC Scopus Subject Areas

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