Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

Gon Namkoong; Elaissa Trybus; Kyung Keun Lee; Michael Moseley; W. Alan Doolittle; David C. Look

doi:10.1063/1.3005640

Metal modulation epitaxy growth for extremely high hole concentrations above 10¹⁹ cm^-3 in GaN

Gon Namkoong, Elaissa Trybus, Kyung Keun Lee, Michael Moseley, W. Alan Doolittle, David C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	172112
Journal	Applied Physics Letters
Volume	93
Issue number	17
DOIs	https://doi.org/10.1063/1.3005640
State	Published - 2008

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3005640

Cite this

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title = "Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN",

author = "Gon Namkoong and Elaissa Trybus and Lee, \{Kyung Keun\} and Michael Moseley and Doolittle, \{W. Alan\} and Look, \{David C.\}",

year = "2008",

doi = "10.1063/1.3005640",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

AU - Namkoong, Gon

AU - Trybus, Elaissa

AU - Lee, Kyung Keun

AU - Moseley, Michael

AU - Doolittle, W. Alan

AU - Look, David C.

PY - 2008

Y1 - 2008

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DO - 10.1063/1.3005640

M3 - Article

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VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172112

ER -

Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

ASJC Scopus Subject Areas

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Metal modulation epitaxy growth for extremely high hole concentrations above 10¹⁹ cm^-3 in GaN