Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

A. Y. Polyakov; A. V. Govorkov; N. B. Smirnov; Z. Q. Fang; D. C. Look; S. S. Park; J. H. Han

doi:10.1063/1.1511822

Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, Z. Q. Fang, D. C. Look, S. S. Park, J. H. Han

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	5238-5240
Number of pages	3
Journal	Journal of Applied Physics
Volume	92
Issue number	9
DOIs	https://doi.org/10.1063/1.1511822
State	Published - Nov 1 2002

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.1511822

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title = "Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy",

author = "Polyakov, {A. Y.} and Govorkov, {A. V.} and Smirnov, {N. B.} and Fang, {Z. Q.} and Look, {D. C.} and Park, {S. S.} and Han, {J. H.}",

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language = "English",

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T1 - Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

AU - Polyakov, A. Y.

AU - Govorkov, A. V.

AU - Smirnov, N. B.

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Park, S. S.

AU - Han, J. H.

PY - 2002/11/1

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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