Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

S. H. Goss; X. L. Sun; A. P. Young; L. J. Brillson; D. C. Look; R. J. Molnar

doi:10.1063/1.1377858

Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

S. H. Goss, X. L. Sun, A. P. Young, L. J. Brillson, D. C. Look, R. J. Molnar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3630-3632
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	23
DOIs	https://doi.org/10.1063/1.1377858
State	Published - Jun 4 2001

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1377858

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title = "Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces",

author = "Goss, \{S. H.\} and Sun, \{X. L.\} and Young, \{A. P.\} and Brillson, \{L. J.\} and Look, \{D. C.\} and Molnar, \{R. J.\}",

year = "2001",

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doi = "10.1063/1.1377858",

language = "English",

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journal = "Applied Physics Letters",

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AU - Goss, S. H.

AU - Sun, X. L.

AU - Young, A. P.

AU - Brillson, L. J.

AU - Look, D. C.

AU - Molnar, R. J.

PY - 2001/6/4

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DO - 10.1063/1.1377858

M3 - Article

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EP - 3632

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

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Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

ASJC Scopus Subject Areas

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