Mobility vs thickness in n+-ZnO films: Effects of substrates and buffer layers

David C. Look

doi:10.1016/j.mssp.2016.11.026

Mobility vs thickness in n⁺-ZnO films: Effects of substrates and buffer layers

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Review article › peer-review

Original language	English
Pages (from-to)	2-8
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	69
DOIs	https://doi.org/10.1016/j.mssp.2016.11.026
State	Published - Oct 2017

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Buffer layers
Hall effect
Mobility
Reflectance
Substrates
Thickness dependence

Access to Document

10.1016/j.mssp.2016.11.026

Cite this

@article{d1249b1e6e40499e9746681de3c2f114,

title = "Mobility vs thickness in n+-ZnO films: Effects of substrates and buffer layers",

keywords = "Buffer layers, Hall effect, Mobility, Reflectance, Substrates, Thickness dependence",

author = "Look, {David C.}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = oct,

doi = "10.1016/j.mssp.2016.11.026",

language = "English",

volume = "69",

pages = "2--8",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}

TY - JOUR

T1 - Mobility vs thickness in n+-ZnO films

T2 - Effects of substrates and buffer layers

AU - Look, David C.

PY - 2017/10

Y1 - 2017/10

KW - Buffer layers

KW - Hall effect

KW - Mobility

KW - Reflectance

KW - Substrates

KW - Thickness dependence

UR - http://www.scopus.com/inward/record.url?scp=85007283265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85007283265&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2016.11.026

DO - 10.1016/j.mssp.2016.11.026

M3 - Review article

AN - SCOPUS:85007283265

SN - 1369-8001

VL - 69

SP - 2

EP - 8

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing