Model for thickness dependence of mobility and concentration in highly conductive ZnO

D. C. Look; K. D. Leedy; A. Kiefer; B. Claflin; N. Itagaki; K. Matsushima; I. Surhariadi

doi:10.1117/12.2001287

Model for thickness dependence of mobility and concentration in highly conductive ZnO

D. C. Look, K. D. Leedy, A. Kiefer, B. Claflin, N. Itagaki, K. Matsushima, I. Surhariadi

Future of Semiconductors, a National Science Foundation Program

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Oxide-Based Materials and Devices IV
DOIs	https://doi.org/10.1117/12.2001287
State	Published - 2013
Event	Oxide-Based Materials and Devices IV - San Francisco, CA, United States Duration: Feb 3 2013 → Feb 6 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8626
ISSN (Print)	0277-786X

Conference

Conference	Oxide-Based Materials and Devices IV
Country/Territory	United States
City	San Francisco, CA
Period	2/3/13 → 2/6/13

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Hall effect
Mobility
Reflectance
Thickness dependence
ZnO

Access to Document

10.1117/12.2001287

Cite this

Look, DC, Leedy, KD, Kiefer, A, Claflin, B, Itagaki, N, Matsushima, K & Surhariadi, I 2013, Model for thickness dependence of mobility and concentration in highly conductive ZnO. in Oxide-Based Materials and Devices IV., 862602, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8626, Oxide-Based Materials and Devices IV, San Francisco, CA, United States, 2/3/13. https://doi.org/10.1117/12.2001287

@inproceedings{9d0338696116416dace646a6522b3326,

title = "Model for thickness dependence of mobility and concentration in highly conductive ZnO",

keywords = "Hall effect, Mobility, Reflectance, Thickness dependence, ZnO",

author = "Look, {D. C.} and Leedy, {K. D.} and A. Kiefer and B. Claflin and N. Itagaki and K. Matsushima and I. Surhariadi",

year = "2013",

doi = "10.1117/12.2001287",

language = "English",

isbn = "9780819493958",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Oxide-Based Materials and Devices IV",

note = "Oxide-Based Materials and Devices IV ; Conference date: 03-02-2013 Through 06-02-2013",

}

TY - GEN

T1 - Model for thickness dependence of mobility and concentration in highly conductive ZnO

AU - Look, D. C.

AU - Leedy, K. D.

AU - Kiefer, A.

AU - Claflin, B.

AU - Itagaki, N.

AU - Matsushima, K.

AU - Surhariadi, I.

PY - 2013

Y1 - 2013

KW - Hall effect

KW - Mobility

KW - Reflectance

KW - Thickness dependence

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84878208064&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878208064&partnerID=8YFLogxK

U2 - 10.1117/12.2001287

DO - 10.1117/12.2001287

M3 - Conference contribution

AN - SCOPUS:84878208064

SN - 9780819493958

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices IV

T2 - Oxide-Based Materials and Devices IV

Y2 - 3 February 2013 through 6 February 2013

ER -

Model for thickness dependence of mobility and concentration in highly conductive ZnO

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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