@inproceedings{c669ffc29ade46aebc86454e63d11717,
title = "Model for Ultrafast Extrinsic Photoconductivity in Er-Doped GaAs",
abstract = "A model is constructed for extrinsic photoconductivity in GaAs heavily doped with Er and driven around 1550 nm. The model is based on internal photoionization of ErAs nanoparticles in the diameter range 2.0 to 2.5 nm, which occurs via a resonant, bound-to-continuum electron transition between the Γ-point in the atomic-like ErAs and the Γ-valley in the GaAs. The model is consistent with all experimental evidence to date, including sub-band absorption, photo-Hall measurements, 1550-nm pump-probe photocarrier lifetime, and THz power generation.",
keywords = "Gallim arsenide, Nanoparticles, Photoconductivity, Absorption, Antenna measurements, Detectors, Power measurement, Electronic Transitions, GaAs Substrate",
author = "Brown, \{E. R.\} and Zhang, \{W. D.\} and A. Feldman and T. Harvey and Mirin, \{R. P.\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 ; Conference date: 25-09-2016 Through 30-09-2016",
year = "2016",
month = nov,
day = "28",
doi = "10.1109/IRMMW-THz.2016.7758557",
language = "English",
series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",
publisher = "IEEE Computer Society",
booktitle = "41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016",
}