TY - JOUR
T1 - Modeling of strained CMOS on disposable SiGe dots
T2 - Shape impacts on electrical/thermal characteristics
AU - Frégonèse, Sébastien
AU - Zhuang, Yan
AU - Burghartz, Joachim N.
PY - 2008/6
Y1 - 2008/6
KW - d-DOT FET
KW - MOS
KW - Self-heating
KW - Short channel effect
KW - Strain
KW - Stress
UR - http://www.scopus.com/inward/record.url?scp=42749094948&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42749094948&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2008.01.022
DO - 10.1016/j.sse.2008.01.022
M3 - Article
AN - SCOPUS:42749094948
SN - 0038-1101
VL - 52
SP - 919
EP - 925
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 6
ER -