Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics

Sébastien Frégonèse; Yan Zhuang; Joachim N. Burghartz

doi:10.1016/j.sse.2008.01.022

Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics

Sébastien Frégonèse, Yan Zhuang, Joachim N. Burghartz

Research output: Contribution to journal › Article › peer-review

Abstract

We proposed a new non-planar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts' relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress from the underlaying SiGe 3D islands. We show that more than 50% higher mobilities of electrons can be obtained as indicated by 3D simulations performed throughout the entire fabrication process. Then, fully-depleted SOI MOSFET and d-Dot MOSFET are compared in term of short channel effects, parasitic capacitance effects and self-heating effects.

Original language	English
Pages (from-to)	919-925
Number of pages	7
Journal	Solid-State Electronics
Volume	52
Issue number	6
DOIs	https://doi.org/10.1016/j.sse.2008.01.022
State	Published - Jun 2008
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

d-DOT FET
MOS
Self-heating
Short channel effect
Strain
Stress

Disciplines

Electrical and Computer Engineering

Access to Document

10.1016/j.sse.2008.01.022

Cite this

@article{9500af5e801346b686a85af547cf5f40,

title = "Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics",

abstract = "We proposed a new non-planar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts' relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress from the underlaying SiGe 3D islands. We show that more than 50% higher mobilities of electrons can be obtained as indicated by 3D simulations performed throughout the entire fabrication process. Then, fully-depleted SOI MOSFET and d-Dot MOSFET are compared in term of short channel effects, parasitic capacitance effects and self-heating effects.",

keywords = "d-DOT FET, MOS, Self-heating, Short channel effect, Strain, Stress",

author = "S{\'e}bastien Fr{\'e}gon{\`e}se and Yan Zhuang and Burghartz, {Joachim N.}",

year = "2008",

month = jun,

doi = "10.1016/j.sse.2008.01.022",

language = "English",

volume = "52",

pages = "919--925",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "6",

}

TY - JOUR

T1 - Modeling of strained CMOS on disposable SiGe dots

T2 - Shape impacts on electrical/thermal characteristics

AU - Frégonèse, Sébastien

AU - Zhuang, Yan

AU - Burghartz, Joachim N.

PY - 2008/6

Y1 - 2008/6

N2 - We proposed a new non-planar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts' relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress from the underlaying SiGe 3D islands. We show that more than 50% higher mobilities of electrons can be obtained as indicated by 3D simulations performed throughout the entire fabrication process. Then, fully-depleted SOI MOSFET and d-Dot MOSFET are compared in term of short channel effects, parasitic capacitance effects and self-heating effects.

AB - We proposed a new non-planar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts' relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress from the underlaying SiGe 3D islands. We show that more than 50% higher mobilities of electrons can be obtained as indicated by 3D simulations performed throughout the entire fabrication process. Then, fully-depleted SOI MOSFET and d-Dot MOSFET are compared in term of short channel effects, parasitic capacitance effects and self-heating effects.

KW - d-DOT FET

KW - MOS

KW - Self-heating

KW - Short channel effect

KW - Strain

KW - Stress

UR - http://www.scopus.com/inward/record.url?scp=42749094948&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42749094948&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2008.01.022

DO - 10.1016/j.sse.2008.01.022

M3 - Article

AN - SCOPUS:42749094948

SN - 0038-1101

VL - 52

SP - 919

EP - 925

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -

Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics

Abstract

ASJC Scopus Subject Areas

Keywords

Disciplines

Access to Document

Other files and links

Cite this