Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics

Sébastien Frégonèse, Yan Zhuang, Joachim N. Burghartz

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)919-925
Number of pages7
JournalSolid-State Electronics
Volume52
Issue number6
DOIs
StatePublished - Jun 2008
Externally publishedYes

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • d-DOT FET
  • MOS
  • Self-heating
  • Short channel effect
  • Strain
  • Stress

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