@article{3c87fdf1e615482197f993cd435918b2,
title = "Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices' electrical characteristics",
keywords = "Dot, FET, Mobility, MOS, SiGe, SON, Strain",
author = "S{\'e}bastien Fregonese and Yan Zhuang and {Burghartz Joachim N.}, {J. N.}",
year = "2007",
month = sep,
doi = "10.1109/TED.2007.902719",
language = "English",
volume = "54",
pages = "2321--2326",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "9",
}