Monte Carlo simulation of bulk hole transport in AlxGa 1-xAs, In1-xAlxAs, and GaAsxSb 1-x

Marino J. Martinez; David C. Look; John R. Sizelove; Fritz L. Schuermeyer

doi:10.1063/1.359052

Monte Carlo simulation of bulk hole transport in Al_xGa _1-xAs, In_1-xAl_xAs, and GaAs_xSb _1-x

Marino J. Martinez, David C. Look, John R. Sizelove, Fritz L. Schuermeyer

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	661-664
Number of pages	4
Journal	Journal of Applied Physics
Volume	77
Issue number	2
DOIs	https://doi.org/10.1063/1.359052
State	Published - 1995

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.359052

Cite this

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title = "Monte Carlo simulation of bulk hole transport in AlxGa 1-xAs, In1-xAlxAs, and GaAsxSb 1-x",

author = "Martinez, \{Marino J.\} and Look, \{David C.\} and Sizelove, \{John R.\} and Schuermeyer, \{Fritz L.\}",

year = "1995",

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language = "English",

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pages = "661--664",

journal = "Journal of Applied Physics",

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AU - Martinez, Marino J.

AU - Look, David C.

AU - Sizelove, John R.

AU - Schuermeyer, Fritz L.

PY - 1995

Y1 - 1995

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

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Monte Carlo simulation of bulk hole transport in AlxGa 1-xAs, In1-xAlxAs, and GaAsxSb 1-x

ASJC Scopus Subject Areas

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Monte Carlo simulation of bulk hole transport in Al_xGa _1-xAs, In_1-xAl_xAs, and GaAs_xSb _1-x