Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200°C

D. C. Look; D. C. Walters; M. Mier; C. E. Stutz; S. K. Brierley

doi:10.1063/1.106813

Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200°C

D. C. Look, D. C. Walters, M. Mier, C. E. Stutz, S. K. Brierley

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2900-2902
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	23
DOIs	https://doi.org/10.1063/1.106813
State	Published - 1992

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.106813

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title = "Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200°C",

author = "Look, \{D. C.\} and Walters, \{D. C.\} and M. Mier and Stutz, \{C. E.\} and Brierley, \{S. K.\}",

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language = "English",

volume = "60",

pages = "2900--2902",

journal = "Applied Physics Letters",

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T1 - Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200°C

AU - Look, D. C.

AU - Walters, D. C.

AU - Mier, M.

AU - Stutz, C. E.

AU - Brierley, S. K.

PY - 1992

Y1 - 1992

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DO - 10.1063/1.106813

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VL - 60

SP - 2900

EP - 2902

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200°C

ASJC Scopus Subject Areas

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