New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs

P. Fakhimi; W. D. Zhang; T. A. Growden; E. R. Brown; R. Droopad; K. M. Hansen; P. R. Berger

doi:10.1109/DRC46940.2019.9046392

New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs

P. Fakhimi, W. D. Zhang, T. A. Growden, E. R. Brown, R. Droopad, K. M. Hansen, P. R. Berger

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2019 Device Research Conference, DRC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	119-120
Number of pages	2
ISBN (Electronic)	9781728121123
DOIs	https://doi.org/10.1109/DRC46940.2019.9046392
State	Published - Jun 2019
Externally published	Yes
Event	2019 Device Research Conference, DRC 2019 - Ann Arbor, United States Duration: Jun 23 2019 → Jun 26 2019

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2019-June
ISSN (Print)	1548-3770

Conference

Conference	2019 Device Research Conference, DRC 2019
Country/Territory	United States
City	Ann Arbor
Period	6/23/19 → 6/26/19

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC46940.2019.9046392

Cite this

Fakhimi, P., Zhang, W. D., Growden, T. A., Brown, E. R., Droopad, R., Hansen, K. M., & Berger, P. R. (2019). New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. In 2019 Device Research Conference, DRC 2019 (pp. 119-120). Article 9046392 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC46940.2019.9046392

New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. / Fakhimi, P.; Zhang, W. D.; Growden, T. A. et al.
2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 119-120 9046392 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fakhimi, P, Zhang, WD, Growden, TA, Brown, ER, Droopad, R, Hansen, KM & Berger, PR 2019, New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. in 2019 Device Research Conference, DRC 2019., 9046392, Device Research Conference - Conference Digest, DRC, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 119-120, 2019 Device Research Conference, DRC 2019, Ann Arbor, United States, 6/23/19. https://doi.org/10.1109/DRC46940.2019.9046392

Fakhimi P, Zhang WD, Growden TA, Brown ER, Droopad R, Hansen KM et al. New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. In 2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 119-120. 9046392. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC46940.2019.9046392

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title = "New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs",

author = "P. Fakhimi and Zhang, \{W. D.\} and Growden, \{T. A.\} and Brown, \{E. R.\} and R. Droopad and Hansen, \{K. M.\} and Berger, \{P. R.\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Device Research Conference, DRC 2019 ; Conference date: 23-06-2019 Through 26-06-2019",

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AU - Berger, P. R.

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New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

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