Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band

H. Yamamoto; Z. Q. Fang; D. C. Look

doi:10.1063/1.103345

Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band

H. Yamamoto, Z. Q. Fang, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1537-1539
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	15
DOIs	https://doi.org/10.1063/1.103345
State	Published - 1990

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band",

author = "H. Yamamoto and Fang, {Z. Q.} and Look, {D. C.}",

year = "1990",

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volume = "57",

pages = "1537--1539",

journal = "Applied Physics Letters",

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T2 - Influence of deep donor band

AU - Yamamoto, H.

AU - Fang, Z. Q.

AU - Look, D. C.

PY - 1990

Y1 - 1990

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band

ASJC Scopus Subject Areas

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