Nondestructive mapping of carrier concentration and dislocation density in n+-type GaAs

D. C. Look; D. C. Walters; M. G. Mier; J. R. Sizelove

doi:10.1063/1.112757

Nondestructive mapping of carrier concentration and dislocation density in n⁺-type GaAs

D. C. Look, D. C. Walters, M. G. Mier, J. R. Sizelove

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2188-2190
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	17
DOIs	https://doi.org/10.1063/1.112757
State	Published - 1994

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.112757

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title = "Nondestructive mapping of carrier concentration and dislocation density in n+-type GaAs",

author = "Look, {D. C.} and Walters, {D. C.} and Mier, {M. G.} and Sizelove, {J. R.}",

year = "1994",

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language = "English",

volume = "65",

pages = "2188--2190",

journal = "Applied Physics Letters",

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AU - Look, D. C.

AU - Walters, D. C.

AU - Mier, M. G.

AU - Sizelove, J. R.

PY - 1994

Y1 - 1994

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DO - 10.1063/1.112757

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VL - 65

SP - 2188

EP - 2190

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Nondestructive mapping of carrier concentration and dislocation density in n+-type GaAs

ASJC Scopus Subject Areas

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Nondestructive mapping of carrier concentration and dislocation density in n⁺-type GaAs