Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and VZn in ZnO:Ga

David C. Look; Kevin D. Leedy; Donald L. Agresta

doi:10.1063/1.4884347

Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and V_Zn in ZnO:Ga

David C. Look
, Kevin D. Leedy
, Donald L. Agresta

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	242107
Journal	Applied Physics Letters
Volume	104
Issue number	24
DOIs	https://doi.org/10.1063/1.4884347
State	Published - Jun 16 2014

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4884347

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author = "Look, \{David C.\} and Leedy, \{Kevin D.\} and Agresta, \{Donald L.\}",

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language = "English",

volume = "104",

journal = "Applied Physics Letters",

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T2 - Ga and VZn in ZnO:Ga

AU - Look, David C.

AU - Leedy, Kevin D.

AU - Agresta, Donald L.

PY - 2014/6/16

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JF - Applied Physics Letters

IS - 24

M1 - 242107

ER -

Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and VZn in ZnO:Ga

ASJC Scopus Subject Areas

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Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and V_Zn in ZnO:Ga