Novel ga/ascl3/h2 reactor for controlling stoichiometry in the growth of vapor phase epitaxy (vpe) gaas

P. C. Colter, C. W. Litton, D. C. Reynolds, D. C. Look, P. W. Yu, S. S. Li, W. L. Wang

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)28-35
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume323
DOIs
StatePublished - Sep 15 1982

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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