Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature

W. C.B. Peatman; W. J. Grimm; M. Shur; E. R. Brown; P. Maki; M. J. Rooks

doi:10.1109/55.294081

Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature

W. C.B. Peatman, W. J. Grimm, M. Shur, E. R. Brown, P. Maki, M. J. Rooks

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	236-238
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	15
Issue number	7
DOIs	https://doi.org/10.1109/55.294081
State	Published - Jul 1994
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.294081

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title = "Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature",

author = "Peatman, {W. C.B.} and Grimm, {W. J.} and M. Shur and Brown, {E. R.} and P. Maki and Rooks, {M. J.}",

year = "1994",

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journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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AU - Peatman, W. C.B.

AU - Grimm, W. J.

AU - Shur, M.

AU - Brown, E. R.

AU - Maki, P.

AU - Rooks, M. J.

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SN - 0741-3106

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SP - 236

EP - 238

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

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Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature

ASJC Scopus Subject Areas

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