Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Ya I. Alivov; J. E. Van Nostrand; D. C. Look; M. V. Chukichev; B. M. Ataev

doi:10.1063/1.1615308

Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Ya I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2943-2945
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	14
DOIs	https://doi.org/10.1063/1.1615308
State	Published - Oct 6 2003

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1615308

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title = "Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes",

author = "Alivov, {Ya I.} and {Van Nostrand}, {J. E.} and Look, {D. C.} and Chukichev, {M. V.} and Ataev, {B. M.}",

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language = "English",

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journal = "Applied Physics Letters",

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AU - Alivov, Ya I.

AU - Van Nostrand, J. E.

AU - Look, D. C.

AU - Chukichev, M. V.

AU - Ataev, B. M.

PY - 2003/10/6

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DO - 10.1063/1.1615308

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AN - SCOPUS:0142167493

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EP - 2945

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

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Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

ASJC Scopus Subject Areas

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