Observation of deep defects in As-rich GaAs grown by the molecular beam epitaxy technique at 200°C

M. O. Manasreh; D. C. Look; K. R. Evans; C. E. Stutz

Observation of deep defects in As-rich GaAs grown by the molecular beam epitaxy technique at 200°C

M. O. Manasreh, D. C. Look, K. R. Evans, C. E. Stutz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Proceedings of the 6th Conference on Semi-Insulating III-V
Publisher	Publ by IEEE
Pages	105-110
Number of pages	6
ISBN (Print)	0750300663
State	Published - 1990
Externally published	Yes
Event	Proceedings of the 6th Conference on Semi-Insulating III-V Materials - Toronto, Ont, Can Duration: May 13 1990 → May 16 1990

Publication series

Name	Proceedings of the 6th Conference on Semi-Insulating III-V

Conference

Conference	Proceedings of the 6th Conference on Semi-Insulating III-V Materials
City	Toronto, Ont, Can
Period	5/13/90 → 5/16/90

ASJC Scopus Subject Areas

General Engineering

Cite this

Observation of deep defects in As-rich GaAs grown by the molecular beam epitaxy technique at 200°C. / Manasreh, M. O.; Look, D. C.; Evans, K. R. et al.
Proceedings of the 6th Conference on Semi-Insulating III-V. Publ by IEEE, 1990. p. 105-110 (Proceedings of the 6th Conference on Semi-Insulating III-V).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Manasreh, MO, Look, DC, Evans, KR & Stutz, CE 1990, Observation of deep defects in As-rich GaAs grown by the molecular beam epitaxy technique at 200°C. in Proceedings of the 6th Conference on Semi-Insulating III-V. Proceedings of the 6th Conference on Semi-Insulating III-V, Publ by IEEE, pp. 105-110, Proceedings of the 6th Conference on Semi-Insulating III-V Materials, Toronto, Ont, Can, 5/13/90.

@inproceedings{a4661cb86b1a42a591f9e3d66d6b7751,

title = "Observation of deep defects in As-rich GaAs grown by the molecular beam epitaxy technique at 200°C",

author = "Manasreh, \{M. O.\} and Look, \{D. C.\} and Evans, \{K. R.\} and Stutz, \{C. E.\}",

year = "1990",

language = "English",

isbn = "0750300663",

series = "Proceedings of the 6th Conference on Semi-Insulating III-V",

publisher = "Publ by IEEE",

pages = "105--110",

booktitle = "Proceedings of the 6th Conference on Semi-Insulating III-V",

note = "Proceedings of the 6th Conference on Semi-Insulating III-V Materials ; Conference date: 13-05-1990 Through 16-05-1990",

}

TY - GEN

T1 - Observation of deep defects in As-rich GaAs grown by the molecular beam epitaxy technique at 200°C

AU - Manasreh, M. O.

AU - Look, D. C.

AU - Evans, K. R.

AU - Stutz, C. E.

PY - 1990

Y1 - 1990

UR - https://www.scopus.com/pages/publications/0025577188

UR - https://www.scopus.com/inward/citedby.url?scp=0025577188&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025577188

SN - 0750300663

T3 - Proceedings of the 6th Conference on Semi-Insulating III-V

SP - 105

EP - 110

BT - Proceedings of the 6th Conference on Semi-Insulating III-V

PB - Publ by IEEE

T2 - Proceedings of the 6th Conference on Semi-Insulating III-V Materials

Y2 - 13 May 1990 through 16 May 1990

ER -

Observation of deep defects in As-rich GaAs grown by the molecular beam epitaxy technique at 200°C

Publication series

Conference

ASJC Scopus Subject Areas

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Cite this