Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps

D. C. Look; H. Yamamoto; K. Nakano

doi:10.1109/16.129112

Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps

D. C. Look, H. Yamamoto, K. Nakano

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1237-1239
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	5
DOIs	https://doi.org/10.1109/16.129112
State	Published - May 1992

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.129112

Cite this

@article{b2be438160e842fd9698382e111597f2,

title = "Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps",

author = "Look, {D. C.} and H. Yamamoto and K. Nakano",

year = "1992",

month = may,

doi = "10.1109/16.129112",

language = "English",

volume = "39",

pages = "1237--1239",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "5",

}

TY - JOUR

T1 - Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps

AU - Look, D. C.

AU - Yamamoto, H.

AU - Nakano, K.

PY - 1992/5

Y1 - 1992/5

UR - http://www.scopus.com/inward/record.url?scp=0026869641&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026869641&partnerID=8YFLogxK

U2 - 10.1109/16.129112

DO - 10.1109/16.129112

M3 - Article

AN - SCOPUS:0026869641

SN - 0018-9383

VL - 39

SP - 1237

EP - 1239

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this