Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps

D. C. Look; H. Yamamoto; K. Nakano

doi:10.1109/16.129112

Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps

D. C. Look, H. Yamamoto, K. Nakano

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1237-1239
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	5
DOIs	https://doi.org/10.1109/16.129112
State	Published - May 1992

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps",

author = "Look, \{D. C.\} and H. Yamamoto and K. Nakano",

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AU - Look, D. C.

AU - Yamamoto, H.

AU - Nakano, K.

PY - 1992/5

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

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Ohmic Contact Formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps

ASJC Scopus Subject Areas

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