On the main irradiation-induced defect in GaN

L. Polenta; Z. Q. Fang; D. C. Look

doi:10.1063/1.126263

On the main irradiation-induced defect in GaN

L. Polenta, Z. Q. Fang, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2086-2088
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	15
DOIs	https://doi.org/10.1063/1.126263
State	Published - Apr 10 2000

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126263

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AU - Look, D. C.

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On the main irradiation-induced defect in GaN

ASJC Scopus Subject Areas

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