Abstract
The optical and structural properties of sub-micrometer scale Si/SiGe wires grown by solid source molecular beam epitaxy on Si (001) substrates are presented. The structures were grown selectively using SiO2 and Si3N4/SiO2 masks, and have been studied by photoluminescence and high-resolution X-ray diffraction. All samples exhibited a photoluminescence signal from SiGe, but the most intense and narrowest photoluminescence peak (comparable to the Si substrate) was observed from Si/SiGe wires grown in deep-etched Si trenches.
Original language | American English |
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Pages (from-to) | 51-53 |
Journal | Thin Solid Films |
Volume | 380 |
Issue number | 1-2 |
DOIs | |
State | Published - Dec 2000 |
Externally published | Yes |
Keywords
- Photoluminescence
- Microfabrication
- X-ray diffraction
- Finite element method
Disciplines
- Electrical and Computer Engineering