Optical and structural properties of Si/SiGe wires grown on patterned Si substrates

Yan Zhuang, A. Daniel, C. Schelling, F. Schäffler, G. Bauer, J. Grenzer, S. Senz

Research output: Contribution to journalArticlepeer-review

Abstract

The optical and structural properties of sub-micrometer scale Si/SiGe wires grown by solid source molecular beam epitaxy on Si (001) substrates are presented. The structures were grown selectively using SiO2 and Si3N4/SiO2 masks, and have been studied by photoluminescence and high-resolution X-ray diffraction. All samples exhibited a photoluminescence signal from SiGe, but the most intense and narrowest photoluminescence peak (comparable to the Si substrate) was observed from Si/SiGe wires grown in deep-etched Si trenches.
Original languageAmerican English
Pages (from-to)51-53
JournalThin Solid Films
Volume380
Issue number1-2
DOIs
StatePublished - Dec 2000
Externally publishedYes

Keywords

  • Photoluminescence
  • Microfabrication
  • X-ray diffraction
  • Finite element method

Disciplines

  • Electrical and Computer Engineering

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