Optical and structural properties of Si/SiGe wires grown on patterned Si substrates

Yan Zhuang; A. Daniel; C. Schelling; F. Schäffler; G. Bauer; J. Grenzer; S. Senz

doi:10.1016/S0040-6090(00)01467-X

Optical and structural properties of Si/SiGe wires grown on patterned Si substrates

Yan Zhuang
, A. Daniel
, C. Schelling
, F. Schäffler
, G. Bauer
, J. Grenzer
, S. Senz

Research output: Contribution to journal › Article › peer-review

Abstract

The optical and structural properties of sub-micrometer scale Si/SiGe wires grown by solid source molecular beam epitaxy on Si (001) substrates are presented. The structures were grown selectively using SiO2 and Si3N4/SiO2 masks, and have been studied by photoluminescence and high-resolution X-ray diffraction. All samples exhibited a photoluminescence signal from SiGe, but the most intense and narrowest photoluminescence peak (comparable to the Si substrate) was observed from Si/SiGe wires grown in deep-etched Si trenches.

Original language	American English
Pages (from-to)	51-53
Journal	Thin Solid Films
Volume	380
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01467-X
State	Published - Dec 2000
Externally published	Yes

Keywords

Photoluminescence
Microfabrication
X-ray diffraction
Finite element method

Disciplines

Electrical and Computer Engineering

Access to Document

10.1016/S0040-6090(00)01467-X

Cite this

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title = "Optical and structural properties of Si/SiGe wires grown on patterned Si substrates",

abstract = "The optical and structural properties of sub-micrometer scale Si/SiGe wires grown by solid source molecular beam epitaxy on Si (001) substrates are presented. The structures were grown selectively using SiO2 and Si3N4/SiO2 masks, and have been studied by photoluminescence and high-resolution X-ray diffraction. All samples exhibited a photoluminescence signal from SiGe, but the most intense and narrowest photoluminescence peak (comparable to the Si substrate) was observed from Si/SiGe wires grown in deep-etched Si trenches.",

keywords = "Photoluminescence, Microfabrication, X-ray diffraction, Finite element method",

author = "Yan Zhuang and A. Daniel and C. Schelling and F. Sch{\"a}ffler and G. Bauer and J. Grenzer and S. Senz",

year = "2000",

month = dec,

doi = "10.1016/S0040-6090(00)01467-X",

language = "American English",

volume = "380",

pages = "51--53",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1-2",

}

TY - JOUR

T1 - Optical and structural properties of Si/SiGe wires grown on patterned Si substrates

AU - Zhuang, Yan

AU - Daniel, A.

AU - Schelling, C.

AU - Schäffler, F.

AU - Bauer, G.

AU - Grenzer, J.

AU - Senz, S.

PY - 2000/12

Y1 - 2000/12

N2 - The optical and structural properties of sub-micrometer scale Si/SiGe wires grown by solid source molecular beam epitaxy on Si (001) substrates are presented. The structures were grown selectively using SiO2 and Si3N4/SiO2 masks, and have been studied by photoluminescence and high-resolution X-ray diffraction. All samples exhibited a photoluminescence signal from SiGe, but the most intense and narrowest photoluminescence peak (comparable to the Si substrate) was observed from Si/SiGe wires grown in deep-etched Si trenches.

AB - The optical and structural properties of sub-micrometer scale Si/SiGe wires grown by solid source molecular beam epitaxy on Si (001) substrates are presented. The structures were grown selectively using SiO2 and Si3N4/SiO2 masks, and have been studied by photoluminescence and high-resolution X-ray diffraction. All samples exhibited a photoluminescence signal from SiGe, but the most intense and narrowest photoluminescence peak (comparable to the Si substrate) was observed from Si/SiGe wires grown in deep-etched Si trenches.

KW - Photoluminescence

KW - Microfabrication

KW - X-ray diffraction

KW - Finite element method

U2 - 10.1016/S0040-6090(00)01467-X

DO - 10.1016/S0040-6090(00)01467-X

M3 - Article

SN - 0040-6090

VL - 380

SP - 51

EP - 53

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -