Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

F. Hamdani; A. Botchkarev; W. Kim; H. Morkoç; M. Yeadon; J. M. Gibson; S. C.Y. Tsen; David J. Smith; D. C. Reynolds; D. C. Look; K. Evans; C. W. Litton; W. C. Mitchel; P. Hemenger

doi:10.1063/1.118183

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S. C.Y. Tsen, David J. Smith, D. C. Reynolds, D. C. Look, K. Evans, C. W. Litton, W. C. Mitchel, P. Hemenger

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	467-469
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	4
DOIs	https://doi.org/10.1063/1.118183
State	Published - Jan 27 1997

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.118183

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@article{81b312172f6440dd9771efad9acbd935,

title = "Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy",

author = "F. Hamdani and A. Botchkarev and W. Kim and H. Morko{\c c} and M. Yeadon and Gibson, \{J. M.\} and Tsen, \{S. C.Y.\} and Smith, \{David J.\} and Reynolds, \{D. C.\} and Look, \{D. C.\} and K. Evans and Litton, \{C. W.\} and Mitchel, \{W. C.\} and P. Hemenger",

year = "1997",

month = jan,

day = "27",

doi = "10.1063/1.118183",

language = "English",

volume = "70",

pages = "467--469",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "4",

}

TY - JOUR

T1 - Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

AU - Hamdani, F.

AU - Botchkarev, A.

AU - Kim, W.

AU - Morkoç, H.

AU - Yeadon, M.

AU - Gibson, J. M.

AU - Tsen, S. C.Y.

AU - Smith, David J.

AU - Reynolds, D. C.

AU - Look, D. C.

AU - Evans, K.

AU - Litton, C. W.

AU - Mitchel, W. C.

AU - Hemenger, P.

PY - 1997/1/27

Y1 - 1997/1/27

UR - https://www.scopus.com/pages/publications/8644275535

UR - https://www.scopus.com/inward/citedby.url?scp=8644275535&partnerID=8YFLogxK

U2 - 10.1063/1.118183

DO - 10.1063/1.118183

M3 - Article

AN - SCOPUS:8644275535

SN - 0003-6951

VL - 70

SP - 467

EP - 469

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

ASJC Scopus Subject Areas

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