Optical signatures of deep level defects in Ga2O3

Hantian Gao; Shreyas Muralidharan; Nicholas Pronin; Md Rezaul Karim; Susan M. White; Thaddeus Asel; Geoffrey Foster; Sriram Krishnamoorthy; Siddharth Rajan; Lei R. Cao; Masataka Higashiwaki; Holger Von Wenckstern; Marius Grundmann; Hongping Zhao; David C. Look; Leonard J. Brillson

doi:10.1063/1.5026770

Optical signatures of deep level defects in Ga₂O₃

Hantian Gao, Shreyas Muralidharan, Nicholas Pronin, Md Rezaul Karim, Susan M. White, Thaddeus Asel, Geoffrey Foster, Sriram Krishnamoorthy, Siddharth Rajan, Lei R. Cao, Masataka Higashiwaki, Holger Von Wenckstern, Marius Grundmann, Hongping Zhao, David C. Look, Leonard J. Brillson

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	242102
Journal	Applied Physics Letters
Volume	112
Issue number	24
DOIs	https://doi.org/10.1063/1.5026770
State	Published - Jun 11 2018

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5026770

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Gao, H., Muralidharan, S., Pronin, N., Karim, M. R., White, S. M., Asel, T., Foster, G., Krishnamoorthy, S., Rajan, S., Cao, L. R., Higashiwaki, M., Von Wenckstern, H., Grundmann, M., Zhao, H., Look, D. C., & Brillson, L. J. (2018). Optical signatures of deep level defects in Ga₂O₃ Applied Physics Letters, 112(24), Article 242102. https://doi.org/10.1063/1.5026770

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title = "Optical signatures of deep level defects in Ga2O3 ",

author = "Hantian Gao and Shreyas Muralidharan and Nicholas Pronin and Karim, \{Md Rezaul\} and White, \{Susan M.\} and Thaddeus Asel and Geoffrey Foster and Sriram Krishnamoorthy and Siddharth Rajan and Cao, \{Lei R.\} and Masataka Higashiwaki and \{Von Wenckstern\}, Holger and Marius Grundmann and Hongping Zhao and Look, \{David C.\} and Brillson, \{Leonard J.\}",

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month = jun,

day = "11",

doi = "10.1063/1.5026770",

language = "English",

volume = "112",

journal = "Applied Physics Letters",

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T1 - Optical signatures of deep level defects in Ga2O3

AU - Gao, Hantian

AU - Muralidharan, Shreyas

AU - Pronin, Nicholas

AU - Karim, Md Rezaul

AU - White, Susan M.

AU - Asel, Thaddeus

AU - Foster, Geoffrey

AU - Krishnamoorthy, Sriram

AU - Rajan, Siddharth

AU - Cao, Lei R.

AU - Higashiwaki, Masataka

AU - Von Wenckstern, Holger

AU - Grundmann, Marius

AU - Zhao, Hongping

AU - Look, David C.

AU - Brillson, Leonard J.

PY - 2018/6/11

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UR - https://www.scopus.com/inward/citedby.url?scp=85048836921&partnerID=8YFLogxK

U2 - 10.1063/1.5026770

DO - 10.1063/1.5026770

M3 - Article

AN - SCOPUS:85048836921

SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242102

ER -

Optical signatures of deep level defects in Ga2O3

ASJC Scopus Subject Areas

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Optical signatures of deep level defects in Ga₂O₃